Single mask lateral tunneling accelerometer

Author

Hartwell, P.G. ; Bertsch, F.M. ; Miller, S.A. ; Turner, K.L. ; MacDonald, N.C.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1998

fDate

25-29 Jan 1998

Firstpage

340

Lastpage

344

Abstract

A single-mask lateral tunneling accelerometer with integrated tip has been developed and characterized. High aspect ratio single-crystal silicon springs provide high resolution, wide operating bandwidth, and excellent isolation from off-axis stimuli. In this paper, we present the first such device implementing the SCREAM (1994) process technology. We focus on the advantages that this technology affords tunneling accelerometers and present a typical high-resolution accelerometer with 20 μg/rt Hz performance at 100 Hz and 5.5 kHz resonant frequency

Keywords

accelerometers; elemental semiconductors; masks; microsensors; silicon; tunnelling; 100 Hz; 5.5 kHz; SCREAM; Si; Si-SiO₂; high-resolution accelerometer; integrated tip; off-axis stimuli; single-crystal silicon springs; single-mask lateral tunneling accelerometer; tunneling accelerometers; Acceleration; Accelerometers; Automobile manufacture; Bandwidth; Electrostatics; Isolation technology; Micromachining; Springs; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on

Conference_Location

Heidelberg

ISSN

1084-6999

Print_ISBN

0-7803-4412-X

Type

conf

DOI

10.1109/MEMSYS.1998.659779

Filename

659779