Title :
Single mask lateral tunneling accelerometer
Author :
Hartwell, P.G. ; Bertsch, F.M. ; Miller, S.A. ; Turner, K.L. ; MacDonald, N.C.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A single-mask lateral tunneling accelerometer with integrated tip has been developed and characterized. High aspect ratio single-crystal silicon springs provide high resolution, wide operating bandwidth, and excellent isolation from off-axis stimuli. In this paper, we present the first such device implementing the SCREAM (1994) process technology. We focus on the advantages that this technology affords tunneling accelerometers and present a typical high-resolution accelerometer with 20 μg/rt Hz performance at 100 Hz and 5.5 kHz resonant frequency
Keywords :
accelerometers; elemental semiconductors; masks; microsensors; silicon; tunnelling; 100 Hz; 5.5 kHz; SCREAM; Si; Si-SiO2; high-resolution accelerometer; integrated tip; off-axis stimuli; single-crystal silicon springs; single-mask lateral tunneling accelerometer; tunneling accelerometers; Acceleration; Accelerometers; Automobile manufacture; Bandwidth; Electrostatics; Isolation technology; Micromachining; Springs; Tunneling; Voltage;
Conference_Titel :
Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on
Conference_Location :
Heidelberg
Print_ISBN :
0-7803-4412-X
DOI :
10.1109/MEMSYS.1998.659779
