Title :
On the effective mass of holes in inversion layers
Author :
Donetti, L. ; Gámiz, F. ; Thomas, S.M. ; Whall, T.E. ; Leadley, D.R. ; Hellström, P.E. ; Malm, G. ; Östling, M.
Author_Institution :
Dept. de Electron., Univ. de Granada, Granada, Spain
Abstract :
We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band k·p model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.
Keywords :
MOSFET; effective mass; silicon-on-insulator; valence bands; bulk MOSFET; device orientation; effective mass; hole inversion layers; self-consistent simulator; silicon layer thickness; silicon-on-insulator devices; valence band structure; Effective mass; Equations; MOSFETs; Mathematical model; Quantization; Silicon; Substrates;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757950
