Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs

Author

Cheralathan, M. ; Sampedro, C. ; Roldán, J.B. ; Gámiz, F. ; Iannaccone, G. ; Sangiorgi, E. ; Iñiguez, B.

Author_Institution

DEEEA, Univ. Rovira i Virgili (URV), Tarragona, Spain

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

4

Abstract

In this paper we extend a Double Gate (DG) MOSFET model to nanometer technology nodes in order to include the hydrodynamic and quantum mechanical effects, and we show that the final model can accurately reproduce simulation results of the advanced transport models. Template devices representative of 22nm and 16nm DG MOSFETs were used to validate the model. The final model includes the main short-channel and nanoscale effects, such as mobility degradation, channel length modulation, drain-induced barrier lowering, overshoot velocity effects and quantum mechanical effects.

Keywords

MOSFET; nanotechnology; semiconductor device models; advanced transport models; analytical drain current model; channel length modulation; double gate MOSFET model; drain-induced barrier lowering; hydrodynamic effects; mobility degradation; nanometer technology; nanoscale effects; overshoot velocity effects; quantum mechanical effects; short-channel effects; size 16 nm; size 22 nm; Uninterruptible power systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5757954

Filename

5757954