Title :
MAMOS-a novel displacement sensitive transducer for fully digital integrated ac accelerometer
Author :
Yee, Y. ; Park, M. ; Lee, S.-H. ; Lee, S. ; Chun, K. ; Kim, Y.K. ; Cho, D.-I.D.
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A fully digital integrated accelerometer was designed and fabricated based on CMOS and micromachining technologies. The sensing elements of this accelerometer are floating gated n-type MOSFETs with the variable airgap proportional to applied acceleration as gate insulator. The change of this air-gap distance alters the drain current of the sensing MOSFET (metal air-gap MOSFET: MAMOS). Current controlled oscillator converts the change of the drain current of MAMOS to frequency output. Twenty-bit synchronous binary counter is integrated to digitize the frequency output. CMOS compatible doping and annealing process for 2-μm-thick polysilicon used as suspension springs is developed to optimize the trade-off between the mechanical properties and the electrical requirements. Through the slightly modified 1.5 μm CMOS integrated circuit process followed by anisotropic silicon etch, integrated silicon digital accelerometer was fabricated
Keywords :
CMOS digital integrated circuits; MOSFET; accelerometers; annealing; displacement measurement; elemental semiconductors; integrated circuit technology; microsensors; semiconductor doping; silicon; 1.5 mum; 2 mum; CMOS integrated circuit; Si; Si integrated digital accelerometer; air-gap distance; anisotropic silicon etch; annealing; current controlled oscillator; digital integrated ac accelerometer; displacement sensitive transducer; doping; drain current; mechanical analysis; micromachining; n-type MOSFET; polysilicon; sensing MOSFET; suspension springs; synchronous binary counter; Acceleration; Accelerometers; Air gaps; CMOS technology; Insulation; MOSFETs; Mechanical variables control; Micromachining; Silicon; Transducers;
Conference_Titel :
Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on
Conference_Location :
Heidelberg
Print_ISBN :
0-7803-4412-X
DOI :
10.1109/MEMSYS.1998.659780