Title :
High speed IDDQ current sensors for VLSI system testing
Author :
Ramirez-Angulo, J. ; Gonzalez-Altamirano, G.
Author_Institution :
Klipch Sch. of Electr. & Comput. Eng., New Mexico State Univ., Las Cruces, NM, USA
Abstract :
A scheme for measuring IDDQ is presented. It is based on a current sensor which consists of a large W/L MOS transistor in parallel with a small W/L transistor. For IDDQ measurement the large transistor is turned off leaving only the small W/L transistor in the IDDQ´s current path. The potential of the proposed scheme for high resolution, high speed (>1 MHz) IDDQ measurements is discussed with the aid of transistor level computer simulations
Keywords :
VLSI; electric current measurement; electric sensing devices; integrated circuit testing; 1 MHz; IDDQ current sensor; MOS transistor; VLSI system testing; computer simulation; high resolution high speed measurement; Circuit faults; Circuit testing; Clocks; Current measurement; Current supplies; Delay; MOSFETs; Sensor systems; System testing; Very large scale integration;
Conference_Titel :
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3073-0
DOI :
10.1109/ISCAS.1996.539966
