Title :
Fabrication of ZnO nanowire device using top-down approach
Author :
Sultan, S.M. ; Sun, K. ; Partridge, J. ; Allen, M. ; Ashburn, P. ; Chong, H.M.H.
Author_Institution :
Nano Res. Group, Univ. of Southampton, Southampton, UK
Abstract :
ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of the lowering of contact barriers between the ZnO nanowire device and the Al metal electrode.
Keywords :
II-VI semiconductors; Raman spectra; nanoelectronics; nanofabrication; nanowires; photolithography; scanning electron microscopy; semiconductor thin films; vacuum arcs; wide band gap semiconductors; zinc compounds; Al; Al metal electrode; Raman spectroscopy; SEM; ZnO; ZnO nanowire device fabrication; contact annealing; current-voltage characteristics; deposited ZnO thin film; filtered cathodic vacuum arc; image mapping; optical lithography; size 100 nm; top-down approach; Annealing; Fabrication; Nanoscale devices; Raman scattering; Silicon; Zinc oxide;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757956
