Noise properties of AlGaAs/GaAs HPTs with transparent ITO emitter contacts

Author

Lukyanchikova, N.B. ; Garbar, N.P. ; Petrichuk, M.V. ; Rezazadeh, A.A. ; Bashar, Sh.A.

Author_Institution

Inst. of Semicond. Phys., Kiev, Ukraine

fYear

1996

fDate

25-26 Nov 1996

Firstpage

50

Lastpage

55

Abstract

The spectra of different excess noise sources are measured and analysed in AlGaAs/GaAs heterophototransistors with the transparent ITO emitter contact in the dark and under illumination. The 1/f (or burst) fluctuations of the tunnel-recombination component of the base current are shown to be the main source of the excess noise observed. The wide scatter of the noise data for different devices as well as the saturation of the noise level in a given device at the high current region appear to be typical for this noise. Its cut-off frequency determined for the floating base mode of operation is found to vary from 250 kHz to 30 MHz for different samples and at different collector currents. High doping levels of the emitter and base regions are considered as the main reason for the noise observed

Keywords

1/f noise; III-V semiconductors; aluminium compounds; burst noise; gallium arsenide; heterojunction bipolar transistors; phototransistors; semiconductor device noise; 1/f fluctuations; 250 kHz to 30 MHz; AlGaAs-GaAs; AlGaAs/GaAs HPT; ITO; InSnO; burst fluctuations; cut-off frequency; doping level; excess noise source; floating base mode; heterophototransistor; transparent ITO emitter contact; tunnel-recombination base current; Circuit noise; Electrical resistance measurement; Gallium arsenide; Indium tin oxide; Lighting; Noise level; Noise measurement; Optical noise; Semiconductor device noise; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO

Conference_Location

Leeds

Print_ISBN

0-7803-3130-3

Type

conf

DOI

10.1109/EDMO.1996.575797

Filename

575797