• DocumentCode
    3020290
  • Title

    Alloy scattering of substitutional carbon in silicon: A first principles approach

  • Author

    Vaughan, M.P. ; Murphy-Armando, F. ; Fahy, S.

  • Author_Institution
    Tyndall Nat. Inst., Lee Maltings, Ireland
  • fYear
    2011
  • fDate
    14-16 March 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A method is developed to obtain the alloy scattering coefficients from first-principles band structure calculations. It is found that the scattering matrix can be decomposed into two additive components: a chemical part due to atomic substitution and a part due to ionic relaxation. The method is then applied to find the intra-and inter-valley electron scattering rates for substitutional carbon in silicon. Intravalley scattering is found to be the dominant process.
  • Keywords
    ab initio calculations; band structure; carbon; elemental semiconductors; silicon; Si:C; alloy scattering; atomic substitution; band structure; first principles approach; intervalley electron scattering; intravalley electron scattering; ionic relaxation; scattering matrix; silicon; substitutional carbon; Carbon; Lattices; Matrix decomposition; Metals; Scattering; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
  • Conference_Location
    Cork
  • Print_ISBN
    978-1-4577-0090-3
  • Electronic_ISBN
    978-1-4577-0089-7
  • Type

    conf

  • DOI
    10.1109/ULIS.2011.5757983
  • Filename
    5757983
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3020290