Title :
Alloy scattering of substitutional carbon in silicon: A first principles approach
Author :
Vaughan, M.P. ; Murphy-Armando, F. ; Fahy, S.
Author_Institution :
Tyndall Nat. Inst., Lee Maltings, Ireland
Abstract :
A method is developed to obtain the alloy scattering coefficients from first-principles band structure calculations. It is found that the scattering matrix can be decomposed into two additive components: a chemical part due to atomic substitution and a part due to ionic relaxation. The method is then applied to find the intra-and inter-valley electron scattering rates for substitutional carbon in silicon. Intravalley scattering is found to be the dominant process.
Keywords :
ab initio calculations; band structure; carbon; elemental semiconductors; silicon; Si:C; alloy scattering; atomic substitution; band structure; first principles approach; intervalley electron scattering; intravalley electron scattering; ionic relaxation; scattering matrix; silicon; substitutional carbon; Carbon; Lattices; Matrix decomposition; Metals; Scattering; Silicon;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757983
