• DocumentCode
    3020346
  • Title

    Models for interconnect capacitance extraction

  • Author

    Husain, Asim

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    167
  • Lastpage
    172
  • Abstract
    Commonly used numerical methods in capacitance extraction both for small and large circuit blocks are reviewed for a VLSI design. Boundary element based field solvers can effectively be used for small structures but can not be used for large structures because of large grid requirement. Field solvers based on random walk method are more appropriate for large structures but still they are quite slow in comparison to analytic capacitance models, which are generally applied for chip level extractions. Accounting for 3D fringing fields has become essential in analytic models for accurate extraction of current VLSI technologies
  • Keywords
    VLSI; boundary-elements methods; capacitance; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; 3D fringing field; VLSI design; analytical model; boundary element method; field solver; interconnect capacitance; numerical model; parameter extraction; random walk method; Analytical models; Boundary element methods; Capacitance; Central Processing Unit; Dielectric materials; Finite difference methods; Finite element methods; Integrated circuit interconnections; Libraries; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2001 International Symposium on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7695-1025-6
  • Type

    conf

  • DOI
    10.1109/ISQED.2001.915222
  • Filename
    915222