A V-band monolithic InP HEMT resistive mixer with low LO-power requirement

Author

Kashiwa, T. ; Katoh, T. ; Ishida, T. ; Kojima, Y. ; Yamamoto, Y. ; Komaru, M. ; Mitsui, Y.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

369

Lastpage

372

Abstract

We report on a 60 GHz-band InP HEMT resistive mixer that can be operated with very low LO-power. The mixer is fabricated using Coplanar Waveguide (CPW) techniques to reduce production costs. A narrow source-to-drain space and a short length gate (0.15 μm) are employed in order to reduce the LO-power requirement. The minimum conversion loss of 8.4 dB is achieved at a 55 GHz RF frequency with LO power of -2 dBm. This low LO-power is comparable with the best data ever reported for millimeter-wave passive mixers. In addition, the mixer has an excellent IF output linearity that indicates capability to provide good intermodulation performance

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; aluminium compounds; coplanar waveguides; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit measurement; intermodulation; millimetre wave mixers; 0.15 mum; 55 GHz; 60 GHz; 60 GHz-band; 8.4 dB; AlInAs-InGaAs-InP; IF output linearity; InP; RF frequency; V-band monolithic InP HEMT resistive mixer; coplanar waveguide techniques; intermodulation performance; low LO-power requirement; millimeter-wave passive mixers; minimum conversion loss; narrow source-to-drain space; production costs; short length gate; Coplanar waveguides; Costs; Frequency conversion; HEMTs; Indium phosphide; Linearity; Millimeter wave technology; Mixers; Production; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600161

Filename

600161