RF performance of the novel planar-type body-connected FinFET fabricated by isolation-last and self-alignment process

Author

Lin, Po-Hsieh ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Chang, Yu-Che

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

4

Abstract

In this paper, we for the first time demonstrate a detailed radio frequency (RF) simulation study of the novel planar-type body-connected FinFET with 45 nm gate length, for which the DC behavior exhibits better I_ON-I_OFF current ratio and improved transconductance performance when compared with a planar-type FinFET. The RF characteristics are carried out as functions of gate voltage (V_G) and drain current (I_D) as well as the overdrive voltage (V_OV). In addition, the total gate capacitance (C_gg) is also reported.

Keywords

field effect transistors; RF performance; drain current; gate capacitance; gate voltage; isolation-last process; overdrive voltage; planar-type body- connected FinFET; radiofrequency simulation; self-alignment process; size 45 nm; transconductance performance; Capacitance; Doping; Fabrication; FinFETs; Logic gates; Performance evaluation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5757990

Filename

5757990