Title :
RF performance of the novel planar-type body-connected FinFET fabricated by isolation-last and self-alignment process
Author :
Lin, Po-Hsieh ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Chang, Yu-Che
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this paper, we for the first time demonstrate a detailed radio frequency (RF) simulation study of the novel planar-type body-connected FinFET with 45 nm gate length, for which the DC behavior exhibits better ION-IOFF current ratio and improved transconductance performance when compared with a planar-type FinFET. The RF characteristics are carried out as functions of gate voltage (VG) and drain current (ID) as well as the overdrive voltage (VOV). In addition, the total gate capacitance (Cgg) is also reported.
Keywords :
field effect transistors; RF performance; drain current; gate capacitance; gate voltage; isolation-last process; overdrive voltage; planar-type body- connected FinFET; radiofrequency simulation; self-alignment process; size 45 nm; transconductance performance; Capacitance; Doping; Fabrication; FinFETs; Logic gates; Performance evaluation; Radio frequency;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757990
