Title :
The effect of the doping concentration on nanoscale field effect diode performance
Author :
Manavizadeh, N. ; Raissi, F. ; Soleimani, E. Asl
Author_Institution :
Fac. of Electr. & Comput. Eng., K.N. Toosi Univ. of Technol., Tehran, Iran
Abstract :
The performance of nanoscale Field Effect Diode as a function of doping concentration is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 as the doping concentration of source/drain regions increased from 1016 to 1021 cm-3. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic application.
Keywords :
field effect devices; nanoelectronics; semiconductor diodes; doping concentration effect; energy-delay product; intrinsic gate delay time; nanoscale field effect diode performance; source-drain regions; Charge carrier processes; Delay; Doping; Logic gates; MOSFETs; Reservoirs;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757992
