Title :
Variation-resilient current-mode logic circuit design using MTJ devices
Author :
Kim, Youngkeun ; Natsui, Masanori ; Hanyu, Takahiro
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
A current-mode logic-circuit style using MTJ devices as threshold voltage (Vth) variation compensating elements is proposed for realizing a process-variation-aware VLSI processor with maintaining a higher performance capability. The faulty logic-operation behavior due to Vth variation of each MOS transistor can be neglected by adjusting resistance values of MTJ devices that are connected to the source electrode of MOS transistors in series. By using HSPICE simulation under a 90nm CMOS technology, it is demonstrated that basic current-mode logic gates using the proposed method are robust against the Vth variation.
Keywords :
CMOS logic circuits; MOSFET; current-mode circuits; current-mode logic; logic circuits; logic design; CMOS technology; HSPICE simulation; MOS transistor; MTJ devices; faulty logic-operation behavior; process-variation-aware VLSI processor; resistance values; source electrode; threshold voltage; variation-resilient current-mode logic circuit design; Logic gates; MOSFETs; Magnetic tunneling; Performance evaluation; Resistance; Threshold voltage; Very large scale integration;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6271866