Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

Author

Conde, A. ; Martínez, C. ; Saura, X. ; Jiménez, D. ; Miranda, E. ; Rafí, J.M. ; Campabadal, F. ; Suñé, J.

Author_Institution

Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

4

Abstract

The breakdown (BD) voltage statistics of Al₂O₃/HfO₂ nanolaminate (NL) multilayer dielectrics fabricated by atomic layer deposition (ALD) are nmodeled within the percolation theory. Moreover, the nanolaminate BD properties are predicted from the BD statistics of the separate materials, thus providing a reliable BD design framework for NLs. Comparison with experimental data suggests that the electric field in each of the NL layers, rather than the total gate voltage, is the variable that controls the BD statistics.

Keywords

alumina; atomic layer deposition; electric breakdown; hafnium compounds; high-k dielectric thin films; laminates; multilayers; nanocomposites; nanofabrication; percolation; Al₂O₃-HfO₂; atomic layer deposition; breakdown voltage statistics; high-k dielectric layers; nanolaminate multilayer dielectrics; percolation theory; Aluminum oxide; Dielectric constant; Logic gates; Materials; Voltage control; Weibull distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5757995

Filename

5757995