• DocumentCode
    3020541
  • Title

    Mobility extraction in sub 10nm nanowire nMOSFETs with gadolinium-silicate as gate dielectric

  • Author

    Schmidt, M. ; Gottlob, H.D.B. ; Bolten, J. ; Wahlbrink, T. ; Kurz, H.

  • Author_Institution
    Adv. Microelectron. Center Aachen, AMO GmbH, Aachen, Germany
  • fYear
    2011
  • fDate
    14-16 March 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Gadolinium-silicate (GdSiO) as high-k dielectric in sub 10nm gate first nanowire (NW) nMOSFETs is investigated. NW- and UTB- nMOSFETs with conventional SiO2/Poly-Si gate stacks have been fabricated and compared with GdSiO/TiN NW nMOSFETs. Specific nMOSFETs with multiple NWs in parallel have been used to extract the effective mobility by split-CV method and to eliminate the series resistance to correct the measured data.
  • Keywords
    MOSFET; gadolinium compounds; high-k dielectric thin films; nanowires; permittivity; GdSiO; TiN; gadolinium-silicate; gate dielectric; high-k dielectric; mobility extraction; nanowire nMOSFET; series resistance; split-CV method; Capacitance; Electrical resistance measurement; Logic gates; MOSFETs; Silicon; Silicon on insulator technology; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
  • Conference_Location
    Cork
  • Print_ISBN
    978-1-4577-0090-3
  • Electronic_ISBN
    978-1-4577-0089-7
  • Type

    conf

  • DOI
    10.1109/ULIS.2011.5757996
  • Filename
    5757996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3020541