Title :
Mobility extraction in sub 10nm nanowire nMOSFETs with gadolinium-silicate as gate dielectric
Author :
Schmidt, M. ; Gottlob, H.D.B. ; Bolten, J. ; Wahlbrink, T. ; Kurz, H.
Author_Institution :
Adv. Microelectron. Center Aachen, AMO GmbH, Aachen, Germany
Abstract :
Gadolinium-silicate (GdSiO) as high-k dielectric in sub 10nm gate first nanowire (NW) nMOSFETs is investigated. NW- and UTB- nMOSFETs with conventional SiO2/Poly-Si gate stacks have been fabricated and compared with GdSiO/TiN NW nMOSFETs. Specific nMOSFETs with multiple NWs in parallel have been used to extract the effective mobility by split-CV method and to eliminate the series resistance to correct the measured data.
Keywords :
MOSFET; gadolinium compounds; high-k dielectric thin films; nanowires; permittivity; GdSiO; TiN; gadolinium-silicate; gate dielectric; high-k dielectric; mobility extraction; nanowire nMOSFET; series resistance; split-CV method; Capacitance; Electrical resistance measurement; Logic gates; MOSFETs; Silicon; Silicon on insulator technology; Tin;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5757996
