Title :
Tunneling path impact on semi-classical numerical simulations of TFET devices
Author :
De Michielis, Luca ; Iellina, Matteo ; Palestri, Pierpaolo ; Ionescu, Adrian M. ; Selmi, Luca
Author_Institution :
Nanoelectronic Devices Lab. (Nanolab), Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Abstract :
In this work a non-local band-to-band tunnelling model has been implemented into a full-band Monte Carlo simulator. Two different approaches for the choice of the tunnelling path have been implemented and their impact on the transfer characteristics of different Tunnel FET structures is investigated. In both the SOI and the DG TFET architectures we have simulated, up to 1 order of magnitude of underestimation in the current and up to 15% of difference in the value of the Subthreshold Slope can be found according to the choice of the tunnelling path.
Keywords :
Monte Carlo methods; field effect transistors; numerical analysis; silicon-on-insulator; tunnel transistors; tunnelling; DG TFET architecture; SOI; TFET device; full-band Monte Carlo simulator; nonlocal band-to-band tunnelling model; semiclassical numerical simulation; tunnel FET structure; Computational modeling; Electric fields; Electric potential; Logic gates; Semiconductor process modeling; Silicon; Tunneling;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5758002
