A simulation study of N-shell silicon nanowires as biological sensors

Author

Rigante, Sara ; Livi, Paolo ; Hierlemann, Andreas ; Ionescu, Adrian M.

Author_Institution

NANOLAB, Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

4

Abstract

Two different silicon nanowire (SiNW) based devices are discussed as potential ion and biological sensors. Three-dimensional TCAD simulations are used to investigate and compare the efficiency of such devices upon applying an external voltage difference of ΔVg = 50 mV. The simulation results presented in this work reveal that an n-doped shell acts as sensitivity booster for uniformly doped SiNWs. It is demonstrated that a 10 nm n-type shell surrounding a p-type core can produce a sensitivity enhancement of more than 50%.

Keywords

biosensors; elemental semiconductors; nanoelectronics; nanosensors; nanowires; semiconductor device models; silicon; technology CAD (electronics); N-shell silicon nanowire device; Si; biological sensors; n-doped shell; nanoelectronics; p-type core; sensitivity booster; three-dimensional TCAD simulations; Doping; Electric potential; Mathematical model; Sensitivity; Sensors; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5758003

Filename

5758003