Monolithic 3D-ICs with single grain Si thin film transistors

Author

Ishihara, R. ; Golshani, Negin ; Derakhshandeh, J. ; Mofrad, M. R Tajari ; Beenakker, C.I.M.

Author_Institution

Delft Inst. of Microsyst. & Nanoelectron. (DIMES), Delft Univ. of Technol., Delft, Netherlands

fYear

2011

fDate

14-16 March 2011

Firstpage

1

Lastpage

4

Abstract

We propose monolithic 3D-ICs based on single grain Si TFTs where transistors are fabricated inside a silicon grain. Location of the grain was controlled by the μ-Czochralski process which is based on pulsed-laser crystallization of a-Si. Two single-grain TFTs layers were monolithically stacked with electron and hole mobilities of 600 cm²/Vs and 200 cm²/Vs, respectively. Electrical properties are presented of fabricated 6T-SRAM and lateral photodiodes with in-pixel amplifier. Photodiode pixels have a light sensitivity of 100 while SRAM cells fabricated in 128F² area shows a static noise margin of 0.75V with a supply voltage of 5V.

Keywords

crystal growth from melt; crystallisation; electric properties; elemental semiconductors; photodiodes; silicon; thin film transistors; three-dimensional integrated circuits; μ-Czochralski process; SRAM; Si; electrical properties; in-pixel amplifier; lateral photodiodes; monolithic 3D-IC; photodiode pixels; pulsed-laser crystallization; single grain thin film transistors; voltage 0.75 V; voltage 5 V; PIN photodiodes; Random access memory; Silicon; Thin film transistors; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on

Conference_Location

Cork

Print_ISBN

978-1-4577-0090-3

Electronic_ISBN

978-1-4577-0089-7

Type

conf

DOI

10.1109/ULIS.2011.5758004

Filename

5758004