Elastic, piezoelectric and dielectric properties of PIN-PMN-PT crystals grown by Bridgman method

Author

Luo, Jun ; Hackenberger, Wesley ; Zhang, Shujun ; Shrout, Tom R.

Author_Institution

TRS Technol., Inc., State College, PA

fYear

2008

fDate

2-5 Nov. 2008

Firstpage

261

Lastpage

264

Abstract

PIN-PMN-PT (Pb(In_frac12Nb_frac12)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃) single crystals with 26%-59% PIN were successfully grown by Bridgman technique. Elastic, dielectric and piezoelectric properties of ternary PIN-PMN-PT crystals were studied in comparison with PMN-PT (Pb(Mg_1/3Nb_2/3)O₃ - PbTiO₃) crystals. It was demonstrated that PIN-PMN-PT crystals possess as excellent piezoelectric properties as PMN-PT crystals, but can be operated at elevated temperature and AC electric field without the depoling issue. T_RT of PIN-PMN-PT crystals with 26%-36% PIN were roughly in the range of 115 -135degC, 30-40degC higher than that of PMN-PT crystals; meanwhile, E_C were on the order of 4.5-5.6kV/cm, two to three times higher than that of PMN-PT crystals. A full set of measured or derived elastic, piezoelectric and dielectric properties of PIN-PMN-PT crystals are present in this paper.

Keywords

crystal growth from melt; elasticity; ferroelectric materials; ferroelectricity; indium compounds; lead compounds; magnesium compounds; piezoelectric materials; piezoelectricity; AC electric field; Bridgman method; PMN-PT crystal comparison; Pb(In_0.5Nb_0.5)O₃-PMN-PbTiO₃; dielectric properties; elastic properties; piezoelectric properties; temperature 115 C to 135 C; temperature 30 C to 40 C; ternary PIN-PMN-PT crystal growth; Bandwidth; Crystalline materials; Crystallization; Crystals; Dielectric materials; Dielectric measurements; Educational institutions; Electric fields; Sensor arrays; Temperature dependence; PIN-PMN-PT; dielectric property; elastic property; piezoelectric property; single crystal;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2008. IUS 2008. IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4244-2428-3

Electronic_ISBN

978-1-4244-2480-1

Type

conf

DOI

10.1109/ULTSYM.2008.0064

Filename

4803381