• DocumentCode
    3020928
  • Title

    Amorphous silicon: The other silicon

  • Author

    Sturm, J.C. ; Huang, Y. ; Han, L. ; Liu, T. ; Hekmatshoar, B. ; Cherenack, K. ; Lausecker, E. ; Wagner, S.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
  • fYear
    2011
  • fDate
    14-16 March 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    While crystalline silicon FET´s are the key enablers for the integrated circuit field, amorphous silicon thin film transistors are the key semiconductor of the large-area electronics field, also known as “macroelectronics.” This talk reviews the basic properties of amorphous silicon, and then outlines research trends, driven in large part by new applications. These trends include increased performance, increased stability for analog and high duty cycle applications, flexible substrates for products with new form factors, printing for cost reduction, and crystalline silicon-amorphous silicon interfaces for high performance solar cells.
  • Keywords
    amorphous semiconductors; elemental semiconductors; field effect transistors; silicon; FET; Si; amorphous silicon thin film transistors; integrated circuit field; macroelectronics; Active matrix liquid crystal displays; Amorphous silicon; Insulators; Logic gates; Substrates; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
  • Conference_Location
    Cork
  • Print_ISBN
    978-1-4577-0090-3
  • Electronic_ISBN
    978-1-4577-0089-7
  • Type

    conf

  • DOI
    10.1109/ULIS.2011.5758011
  • Filename
    5758011