DocumentCode
3020928
Title
Amorphous silicon: The other silicon
Author
Sturm, J.C. ; Huang, Y. ; Han, L. ; Liu, T. ; Hekmatshoar, B. ; Cherenack, K. ; Lausecker, E. ; Wagner, S.
Author_Institution
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
fYear
2011
fDate
14-16 March 2011
Firstpage
1
Lastpage
4
Abstract
While crystalline silicon FET´s are the key enablers for the integrated circuit field, amorphous silicon thin film transistors are the key semiconductor of the large-area electronics field, also known as “macroelectronics.” This talk reviews the basic properties of amorphous silicon, and then outlines research trends, driven in large part by new applications. These trends include increased performance, increased stability for analog and high duty cycle applications, flexible substrates for products with new form factors, printing for cost reduction, and crystalline silicon-amorphous silicon interfaces for high performance solar cells.
Keywords
amorphous semiconductors; elemental semiconductors; field effect transistors; silicon; FET; Si; amorphous silicon thin film transistors; integrated circuit field; macroelectronics; Active matrix liquid crystal displays; Amorphous silicon; Insulators; Logic gates; Substrates; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location
Cork
Print_ISBN
978-1-4577-0090-3
Electronic_ISBN
978-1-4577-0089-7
Type
conf
DOI
10.1109/ULIS.2011.5758011
Filename
5758011
Link To Document