Title :
High-temperature perspectives of UTB SOI MOSFETs
Author :
Kilchytska, V. ; Andrieu, F. ; Faynot, O. ; Flandre, D.
Author_Institution :
ICTEAM Inst., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
In this paper, we analyze, for the first time to our best knowledge, the high-temperature perspectives of Ultra-thin body (UTB) SOI MOSFETs. High-temperature behavior of threshold voltage, subthreshold slope, transconductance maximum and on-current is analyzed in details through measurements and 2D simulations. Particular attention is paid to the effect of buried oxide (BOX) and Si film thicknesses as well as channel doping on the degradation of main device parameters over the temperature range.
Keywords :
MOSFET; buried layers; elemental semiconductors; semiconductor doping; silicon; silicon-on-insulator; 2D simulations; Si; Si film thickness; UTB SOI MOSFET; buried oxide; channel doping; high-temperature perspectives; subthreshold slope; threshold voltage; transconductance maximum; ultra-thin body; Degradation; Films; MOSFETs; Semiconductor process modeling; Silicon; Temperature; Temperature dependence;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5758013
