Title :
Ge quantum dot Schottky diode operated in a 89GHz Rectenna
Author :
Karmous, A. ; Xu, H. ; Oehme, M. ; Kasper, E. ; Schulze, J.
Author_Institution :
Inst. fur Halbleitertechnik, Univ. Stuttgart, Stuttgart, Germany
Abstract :
Schottky diode structures with Ge quantum dots (QDs) have been grown by Molecular Beam Epitaxy (MBE). They have been employed to fabricate NiSi Schottky diodes with Ge dots buried below the metal-semiconductor junctions. These diodes have cut-off frequencies up to 1.1 THz (calculated from S-parameter measurements up to 110GHz). Preliminary results demonstrating the implementation of Ge QD Schottky diode in a mm-wave power detection system (RECTENNA) are also presented.
Keywords :
Schottky diodes; elemental semiconductors; germanium; millimetre wave antennas; millimetre wave diodes; molecular beam epitaxial growth; nickel compounds; rectennas; semiconductor junctions; semiconductor quantum dots; submillimetre wave diodes; Ge; NiSi; frequency 89 GHz; metal-semiconductor junctions; mm-wave power detection system; molecular beam epitaxy; quantum dot Schottky diode structure; rectenna; Antenna measurements; Current measurement; Junctions; Rectennas; Schottky diodes; Silicon; Voltage measurement;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5758017
