DocumentCode
3021243
Title
A compact low-power supply-insensitive CMOS current reference
Author
Zhao, Chen ; Geiger, Randall ; Chen, Degang
Author_Institution
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fYear
2012
fDate
20-23 May 2012
Firstpage
2825
Lastpage
2828
Abstract
A simple low-power current reference using dual-threshold MOS transistors is introduced. The area required for this reference is small and the sensitivity of the output current to the supply voltage is low. Simulation results show that an implementation of this current reference in a TSMC 0.18um CMOS process with a 1.8V power supply is constant to within ±1.25% over the temperature range of -10°C to 100°C. In this implementation, the active area is 86 μm2, the power dissipation is 72μW, and the worst process corner nonlinearity due to temperature variations is bounded by ±4.16%.
Keywords
CMOS integrated circuits; MOSFET; low-power electronics; reference circuits; TSMC CMOS process; compact low-power supply-insensitive CMOS current reference; dual-threshold MOS transistors; power dissipation; process corner nonlinearity; simple low-power current reference; size 0.18 mum; temperature variations; voltage 1.8 V; CMOS integrated circuits; Equations; Ions; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6271899
Filename
6271899
Link To Document