• DocumentCode
    3021243
  • Title

    A compact low-power supply-insensitive CMOS current reference

  • Author

    Zhao, Chen ; Geiger, Randall ; Chen, Degang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    2825
  • Lastpage
    2828
  • Abstract
    A simple low-power current reference using dual-threshold MOS transistors is introduced. The area required for this reference is small and the sensitivity of the output current to the supply voltage is low. Simulation results show that an implementation of this current reference in a TSMC 0.18um CMOS process with a 1.8V power supply is constant to within ±1.25% over the temperature range of -10°C to 100°C. In this implementation, the active area is 86 μm2, the power dissipation is 72μW, and the worst process corner nonlinearity due to temperature variations is bounded by ±4.16%.
  • Keywords
    CMOS integrated circuits; MOSFET; low-power electronics; reference circuits; TSMC CMOS process; compact low-power supply-insensitive CMOS current reference; dual-threshold MOS transistors; power dissipation; process corner nonlinearity; simple low-power current reference; size 0.18 mum; temperature variations; voltage 1.8 V; CMOS integrated circuits; Equations; Ions; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6271899
  • Filename
    6271899