Title :
Characteristics of AlGaAs/GaAs and InGaP/GaAs HBTs at high temperature
Author :
Bashar, S.A. ; Amin, F.A. ; Rezazadeh, A.A. ; Crouch, M.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´´s Coll., London, UK
Abstract :
A comparison between MOCVD grown AlGaAs/GaAs and InGaP/GaAs HBTs showed a relatively constant DC current gain as a function of temperature upto 300°C for the latter devices. A novel high temperature ohmic contact using ZrB2 diffusion barrier has been developed and found to be suitable for HBTs operating at elevated temperatures. This barrier has been successfully employed in the fabrication of InGaP/GaAs HBTs which operated at 200°C for 18 hours without any significant change to device performance
Keywords :
III-V semiconductors; aluminium compounds; diffusion barriers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; ohmic contacts; vapour phase epitaxial growth; zirconium compounds; 200 C; 25 to 300 C; AlGaAs-GaAs; AlGaAs/GaAs HBTs; DC current gain; InGaP-GaAs; InGaP/GaAs HBTs; ZrB2; ZrB2 diffusion barrier; fabrication; high temperature; high temperature ohmic contact; Educational institutions; Fabrication; Gallium arsenide; Gold; Heterojunction bipolar transistors; MOCVD; Ohmic contacts; Optical devices; Silicon; Temperature distribution;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575814
