Title :
InGaP/InGaAs/GaAs pseudomorphic HEMT grown by solid source MBE
Author :
Aziz, Azlan Abdul ; Missous, Mohamed
Author_Institution :
Inst. of Sci. & Technol., Manchester Univ., UK
Abstract :
We report in here about the first pseudomorphic InGaP/InGaAs/GaAs HEMT demonstrator using an all solid source MBE technique. The quality of thick InGaP is found comparable to state of the art InGaP material grown by other methods. When inserted as part of a pHEMT structure, we found a very large etch selectivity of GaAs over InGaP using H3 PO4:H2O2:H2O solution. 100 μm wide device with a gate length of 5 μm have been fabricated using this selective wet etching technique. Au and AuGe/Au were used as Schottky gate and ohmic source-drain material, respectively, giving a Schottky barrier of 0.81±0.03 eV and lateral drain (or source) contact resistance of <0.1±0.01 Ωmm. An extrinsic transconductance of 80.0±0.2mS/mm was obtained. The large selectivity of GaAs over InGaP (~100 times) leads to a simple, controllable and reproducible pHEMT process
Keywords :
III-V semiconductors; etching; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; 100 micron; 5 micron; 80 mS/mm; Au; Au Schottky gate material; AuGe-Au; AuGe/Au ohmic source-drain material; H3PO4-H2O2-H2 O; H3PO4:H2O2:H2 O solution; InGaP-InGaAs-GaAs; contact resistance; etch selectivity; pHEMT structure; pseudomorphic HEMT; reproducible pHEMT process; selective wet etching technique; solid source MBE; Contact resistance; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; PHEMTs; Schottky barriers; Solids; Transconductance; Wet etching;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575818
