A characterisation technique for the 2-port nonlinear capacitance of short channel FETs

Author

Webster, D.R. ; Haigh, D.G.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

fYear

1996

fDate

25-26 Nov 1996

Firstpage

158

Lastpage

163

Abstract

In this paper a novel technique for characterising the nonlinear behaviour of the 2-port capacitance of a short channel FET in the Total Charge model form is described. Simulations and measurements are presented. It was found that the 1-port parts of this nonlinearity can be interpreted directly from the measurements, whereas the component arising from charge redistribution requires some post processing. We have also presented a relationship between the Total Charge and Split Charge capacitor models, demonstrating that they have identical terminal behaviour in large signal circuit simulators

Keywords

Schottky gate field effect transistors; capacitance; equivalent circuits; semiconductor device models; semiconductor device testing; 2-port nonlinear capacitance; MESFET; characterisation technique; charge redistribution; large signal circuit simulators; nonlinear behaviour; short channel FETs; split charge capacitor model; terminal behaviour; total charge model; Capacitance; Capacitors; Charge measurement; Circuit simulation; Circuit testing; Current measurement; Equivalent circuits; FETs; MESFETs; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO

Conference_Location

Leeds

Print_ISBN

0-7803-3130-3

Type

conf

DOI

10.1109/EDMO.1996.575820

Filename

575820