DocumentCode :
3021625
Title :
PMBAR* - shear mode TFBAR based on (001)AlN thin film
Author :
Milyutin, Evgeny ; Muralt, Paul
Author_Institution :
Mater. Sci. Dept., Swiss Fed. Inst. of Technol. EPFL, Lausanne
fYear :
2008
fDate :
2-5 Nov. 2008
Firstpage :
1215
Lastpage :
1217
Abstract :
A novel concept for shear mode Bulk Acoustic Resonators (BAR) is presented. It is based on c-axis oriented AlN thin films grown on silicon dioxide thin films, combined with interdigitated electrodes. Such a structure leads to an excitation of mainly shear mode displacements in the AlN film. However, a more pure mode is expected if only every second electrode section would contain active AlN, thus requiring means to selective disabling the piezoelectricity in AlN. In this article, such piezo-modulated BAR structures are studied by the finite element method to evaluate the theoretical performance. Preliminary experimental results show the practical feasibility of the new concept. A first test device delivers a quality factor of 1100 in air.
Keywords :
III-V semiconductors; acoustic resonators; aluminium compounds; bulk acoustic wave devices; finite element analysis; piezoelectric thin films; semiconductor thin films; silicon compounds; thin film devices; wide band gap semiconductors; AlN-SiO2; aluminium nitride thin film; finite element method; interdigitated electrode; piezo-modulated BAR structure; piezoelectricity; shear mode TFBAR; shear mode bulk acoustic resonator; shear mode displacement; silicon dioxide thin film; Electrodes; Film bulk acoustic resonators; Finite element methods; Piezoelectric films; Piezoelectricity; Q factor; Semiconductor thin films; Silicon compounds; Testing; Transistors; AlN thin films; PMBAR; TFBAR; component; shear mode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2008. IUS 2008. IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2428-3
Electronic_ISBN :
978-1-4244-2480-1
Type :
conf
DOI :
10.1109/ULTSYM.2008.0293
Filename :
4803416
Link To Document :
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