DocumentCode
3021720
Title
Modelling Intersubband Electroabsorption Modulation
Author
Wong, K.-M. ; Allsopp, D.W.E.
Author_Institution
Univ. of Bath, Bath
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
The scope for using intersubband absorption for electroabsorption modulation has been investigated. Rapid changes in intersubband absorption coefficient with electric field are predicted for modulation doped In0.53Ga0.47As/AlAs deep single and coupled quantum wells.
Keywords
III-V semiconductors; aluminium compounds; electric fields; electroabsorption; electron absorption; gallium arsenide; gallium compounds; quantum wells; In0.53Ga0.47As-AlAs; coupled quantum wells; deep single quantum wells; electric field; electroabsorption modulation; intersubband absorption; Absorption; Energy states; Epitaxial layers; Indium phosphide; Modulation coding; Optical modulation; Optical saturation; PIN photodiodes; Transmission line matrix methods; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453490
Filename
4453490
Link To Document