Title :
All-Metal-Nitride RRAM Devices
Author :
Zhiping Zhang ; Bin Gao ; Zheng Fang ; Xinpeng Wang ; Yanzhe Tang ; Joon Sohn ; Wong, H.-S Philip ; Wong, S. Simon ; Guo-Qiang Lo
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore
Abstract :
This letter presents the novel CMOS-compatible all-metal-nitride resistive random access memory (RRAM) devices based on the TiN/AlN/TiN stack. The device has low operation current <;100 μA, retention of > 3×105 s at 150 °C, and ac endurance of up to 105 Hz. The device switch characteristics are found to agree with the filamentary switch mechanism. In addition, the RRAM devices built with an additional hafnium nitride capping layer have showed less switch voltage variations and stable switch characteristics.
Keywords :
CMOS memory circuits; aluminium compounds; hafnium compounds; resistive RAM; titanium compounds; AC endurance; CMOS compatible device; TiN/AlN/TiN stack; all-metal-nitride RRAM device; filamentary switch characteristic; hafnium nitride capping layer; low operation current; resistive random access memory; switch voltage variation; Electrodes; III-V semiconductor materials; Ions; Resistance; Silicon; Switches; Tin; Aluminium nitride (AlN); Hafnium nitride (HfN); Titanium Nitride (TiN); bipolar switching; hafnium nitride (HfN); resistive random access memory (RRAM); titanium nitride (TiN);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2367542
