Title :
TID and SEE Response of Advanced 4G NAND Flash Memories
Author :
Oldham, T.R. ; Suhail, M. ; Friendlich, M.R. ; Carts, M.A. ; Ladbury, R.L. ; Kim, H.S. ; Berg, M.D. ; Poivey, C. ; Buchner, S.P. ; Sanders, A.B. ; Seidleck, C.M. ; LaBel, K.A.
Author_Institution :
Perot Syst. Gov. Services, Inc., Greenbelt, MD
Abstract :
We present total dose and SEE responses for 4G NAND flash memories by three different manufacturers. The SEE response is scaled to predict the response to atmospheric neutrons at aircraft altitudes and at sea level using the figure of merit.
Keywords :
NAND circuits; flash memories; integrated memory circuits; neutron effects; radiation hardening (electronics); 4G NAND flash memories; SEE response; TID response; aircraft altitudes; atmospheric neutrons; figure of merit; sea level; single event effects; storage capacity 4 Gbit; total ionizing dose; Aircraft; Circuit testing; Error analysis; Manufacturing; NASA; Neutrons; Orbital calculations; Radio access networks; Sea level; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4244-2545-7
DOI :
10.1109/REDW.2008.12
