Title :
TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory
Author :
Schmidt, H. ; Walter, D. ; Gliem, F. ; Nickson, B. ; Harboe-Sørensen, R. ; Virtanen, A.
Author_Institution :
Tech. Univ. of Braunschweig, Braunschweig
Abstract :
We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.
Keywords :
NAND circuits; flash memories; integrated circuit testing; NAND-flash memory; SEE tests; SEFI cross sections; TID tests; error percentage; operational mode dependence; stand-by current; storage capacity 8 Gbit; Breakdown voltage; Data structures; Dosimetry; Ionization chambers; Nonvolatile memory; Physics; Solid state circuits; Telemetry; Temperature; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4244-2545-7
DOI :
10.1109/REDW.2008.13
