Title :
Radiation Performance of 1 Gbit DDR2 SDRAMs Fabricated with 80-90 nm CMOS
Author :
Ladbury, R. ; Berg, M.D. ; LaBel, K.A. ; Friendlich, M. ; Phan, A. ; Kim, H.
Author_Institution :
NASA/GSFC, Greenbelt, MD
Abstract :
We present radiation performance of 1 Gbit DDR2 SDRAMs from three different vendors, including susceptibilities to TID damage and to destructive and nondestructive SEE.
Keywords :
CMOS memory circuits; DRAM chips; radiation hardening (electronics); CMOS; DDR2 SDRAMs; TID damage; radiation performance; second generation double-data- rate; single-event effects; size 80 nm to 90 nm; storage capacity 1 Gbit; synchronous dynamic random access memories; total ionizing dose; Cyclotrons; Electronics packaging; Ion beams; Manufacturing; NASA; Nondestructive testing; Protons; SDRAM; Space technology; System testing;
Conference_Titel :
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4244-2545-7
DOI :
10.1109/REDW.2008.14
