Title :
Investigation of the Mechanism of Stuck Bits in High Capacity SDRAMs
Author :
Scheick, Leif ; Guertin, Steve ; Nguyen, Duc
Abstract :
The phenomenon of stuck bits in SDRAMs is studied. Previous work demonstrated this effect is linear with fluence, and is due to reduction in retention time of stuck cells. Particular emphasis is placed on variations in cell structure that affect sensitivity. The exact mechanism of a stuck bit is predicted.
Keywords :
DRAM chips; cell structure; high capacity SDRAM; retention time reduction; stuck bits; stuck cells; CMOS technology; Capacitance; Capacitors; Image analysis; Integrated circuit technology; MOSFETs; Radiation effects; Random access memory; SDRAM; Tin;
Conference_Titel :
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4244-2545-7
DOI :
10.1109/REDW.2008.15
