DocumentCode
3022113
Title
On the Static Cross Section of SRAM-Based FPGAs
Author
Manuzzato, A. ; Gerardin, S. ; Paccagnella, A. ; Sterpone, L. ; Violante, M.
Author_Institution
Dept. of Inf. Eng., Univ. of Padova, Padova
fYear
2008
fDate
14-18 July 2008
Firstpage
94
Lastpage
97
Abstract
We present new experimental results about the sensitivity of SRAM-based FPGAs to heavy ions. We analyze the static cross section as a function of the FPGA resource type. We also study the soft error rate as function of the accumulated total dose, and investigate the occurrence of multiple bit upsets in the configuration memory. We provide radiation data using a Xilinx Spartan-3 FPGA as test vehicle.
Keywords
SRAM chips; field programmable gate arrays; ion beam effects; radiation hardening (electronics); SRAM-based FPGA; Xilinx Spartan-3; configuration memory; heavy ion radiation sensitivity; multiple bit upsets; soft error rate; static cross section; Alpha particles; CMOS technology; Circuits; Field programmable gate arrays; Ionizing radiation; Logic; Manufacturing; Neutrons; Single event upset; X-rays;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2008 IEEE
Conference_Location
Tucson, AZ
Print_ISBN
978-1-4244-2545-7
Type
conf
DOI
10.1109/REDW.2008.24
Filename
4638622
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