Static Upset Characteristics of the 90nm Virtex-4QV FPGAs

Author

Swift, Gary M. ; Allen, Gregory R. ; Tseng, Chen Wei ; Carmichael, Carl ; Miller, Greg ; George, Jeffrey S.

fYear

2008

fDate

14-18 July 2008

Firstpage

98

Lastpage

105

Abstract

Radiation Test Consortium (XRTC) single-event measurements for three of the latest generation of radiation-tolerant reconfigurable FPGAs from Xilinx (90 nm, copper- interconnected, thin-epitaxial CMOS) are presented. Results include proton and heavy-ion upset susceptibilities for unclocked memory elements, high-temperature latchup immunity and a low SEFI rate (e.g., ~one/device-century in geosynchronous orbit).

Keywords

CMOS integrated circuits; field programmable gate arrays; integrated circuit interconnections; integrated circuit testing; ion beam effects; nanoelectronics; proton effects; radiation hardening (electronics); Virtex-4QV FPGA; Xilinx Radiation Test Consortium; copper-interconnected FPGA; field programmable gate arrays; heavy-ion upset susceptibility; high-temperature latchup immunity; proton upset susceptibility; radiation- tolerant reconfigurable FPGA; single-event measurements; size 90 nm; static upset characteristics; thin-epitaxial CMOS FPGA; unclocked memory elements; CMOS technology; Digital signal processing; Energy management; Field programmable gate arrays; Laboratories; Packaging; Propulsion; Resource management; Telephony; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2008 IEEE

Conference_Location

Tucson, AZ

Print_ISBN

978-1-4244-2545-7

Type

conf

DOI

10.1109/REDW.2008.25

Filename

4638623