DocumentCode
3022218
Title
Application of sol-gel deposited thin PZT film for actuation of 1D and 2D scanners
Author
Schroth, A. ; Lee, C. ; Matsumoto, S. ; Tanaka, M. ; Maeda, R.
Author_Institution
Mech. Eng. Lab., AIST, Tsukuba, Japan
fYear
1998
fDate
25-29 Jan 1998
Firstpage
402
Lastpage
407
Abstract
Despite to promising material properties, only few applications of thin (up to 5 μm) piezoelectric PZT layers for actuation purpose of MEMS exist. To investigate actuation properties and application problems, this paper introduces the design, fabrication and characterization of 1D and 2D micro scanners actuated by a sol-gel deposited PZT layer of 1.5 μm thickness. For the manufactured samples, measurements are carried out. After determining the relative dielectric constant of the PZT layer to about 1000 and its piezoelectric constant d31 to 20...45 10-12 C/N, scanning angles were measured. For the ID scanner, angles between 11° and 35° could be determined, and for the 2D scanning structure 6.5° and 2.5° were observed for 10 Vpp maximum stimulation AC voltage. Deformation of the beams caused by technologically induced strain was found to change the behavior of the actuators. It can both, either decrease the device performance by increase of the mechanical compliance of the beam, or improve the performance by changing sinusoidal oscillation into a buckling-determined “snapping”
Keywords
deformation; etching; lead compounds; microactuators; micromechanical resonators; piezoceramics; piezoelectric actuators; piezoelectric thin films; sol-gel processing; 1.5 mum; 10 V; 1D scanners; 2D scanners; 5 mum; MEMS; PZT; PbZrO3TiO3; PtTi; SiO2; buckling; deformation; design; fabrication; maximum stimulation AC voltage; mechanical compliance; microactuators; piezoelectric PZT layers; piezoelectric constant; relative dielectric constant; sinusoidal oscillation; snapping; sol-gel deposited thin PZT film; technologically induced strain; Capacitive sensors; Dielectric constant; Dielectric measurements; Fabrication; Goniometers; Manufacturing; Material properties; Micromechanical devices; Piezoelectric films; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on
Conference_Location
Heidelberg
ISSN
1084-6999
Print_ISBN
0-7803-4412-X
Type
conf
DOI
10.1109/MEMSYS.1998.659790
Filename
659790
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