• DocumentCode
    3022218
  • Title

    Application of sol-gel deposited thin PZT film for actuation of 1D and 2D scanners

  • Author

    Schroth, A. ; Lee, C. ; Matsumoto, S. ; Tanaka, M. ; Maeda, R.

  • Author_Institution
    Mech. Eng. Lab., AIST, Tsukuba, Japan
  • fYear
    1998
  • fDate
    25-29 Jan 1998
  • Firstpage
    402
  • Lastpage
    407
  • Abstract
    Despite to promising material properties, only few applications of thin (up to 5 μm) piezoelectric PZT layers for actuation purpose of MEMS exist. To investigate actuation properties and application problems, this paper introduces the design, fabrication and characterization of 1D and 2D micro scanners actuated by a sol-gel deposited PZT layer of 1.5 μm thickness. For the manufactured samples, measurements are carried out. After determining the relative dielectric constant of the PZT layer to about 1000 and its piezoelectric constant d31 to 20...45 10-12 C/N, scanning angles were measured. For the ID scanner, angles between 11° and 35° could be determined, and for the 2D scanning structure 6.5° and 2.5° were observed for 10 Vpp maximum stimulation AC voltage. Deformation of the beams caused by technologically induced strain was found to change the behavior of the actuators. It can both, either decrease the device performance by increase of the mechanical compliance of the beam, or improve the performance by changing sinusoidal oscillation into a buckling-determined “snapping”
  • Keywords
    deformation; etching; lead compounds; microactuators; micromechanical resonators; piezoceramics; piezoelectric actuators; piezoelectric thin films; sol-gel processing; 1.5 mum; 10 V; 1D scanners; 2D scanners; 5 mum; MEMS; PZT; PbZrO3TiO3; PtTi; SiO2; buckling; deformation; design; fabrication; maximum stimulation AC voltage; mechanical compliance; microactuators; piezoelectric PZT layers; piezoelectric constant; relative dielectric constant; sinusoidal oscillation; snapping; sol-gel deposited thin PZT film; technologically induced strain; Capacitive sensors; Dielectric constant; Dielectric measurements; Fabrication; Goniometers; Manufacturing; Material properties; Micromechanical devices; Piezoelectric films; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on
  • Conference_Location
    Heidelberg
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-4412-X
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1998.659790
  • Filename
    659790