Title :
InAs HEMT for terahertz applications
Author :
Chang, Edward Yi
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
InP based high indium concentration high-electron mobility transistors (HEMTs) are an attractive transistor technology for millimeter-wave and terahertz applications. Ultra-short gate length (Lg) InAlAs/InGaAs HEMTs on InP substrate has been fabricated and demonstrated excellent RF-performance over the past decade. Higher electron mobility and drift velocity can be realized by reducing of Lg and increasing the indium content in the InxGa1-xAs channel. Due to the high electron mobility, velocity and large conduction band offset in InAs, InAs-channel HEMT is promising for high speed and low power logic applications. In this talk, InAs/InxGa1-xAs channel InP HEMTs are fabricated and evaluated for high-frequency applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; low-power electronics; millimetre wave field effect transistors; terahertz wave devices; InAlAs-InGaAs; InP; RF-performance; channel HEMT; conduction band offset; drift velocity; high indium concentration high-electron mobility transistor; high speed logic application; high-frequency application; low power logic application; millimeter-wave application; terahertz application; transistor technology; ultra-short gate length; Current density; Electron mobility; HEMTs; Indium; Indium phosphide; Logic gates; Substrates;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417072
