Emission Intensity Improvement of InGaN Ultraviolet Light-Emitting Diodes Grown on Wet-Etched Sapphire Substrates

Author

Pan, Chang-Chi ; Hsieh, Chi-Hsun ; Chyi, Jen-Inn

Author_Institution

Nat. Central Univ., Jhongli

fYear

2007

fDate

6-11 May 2007

Firstpage

1

Lastpage

2

Abstract

Wet-etched pattern sapphire substrates (PSS) with stripes along the <11-20>_sapphire direction are fabricated and investigated. Dislocation reduction and light extraction enhancement are observed for the material grown these substrates. 400 nm UV LEDs with output power enhancement as much as 87% have been demonstrated on the substrate with a 0.9 mum etching depth. The enhancement of output power is thus attributed to the reduction of dislocation density as well as increased light extraction efficiency by the stripe-PSS.

Keywords

III-V semiconductors; dislocation density; etching; gallium compounds; indium compounds; light emitting diodes; sapphire; ultraviolet detectors; wide band gap semiconductors; Al₂O₃; InGaN; UV LED; dislocation density reduction; emission intensity; light extraction efficiency enhancement; size 0.9 mum; ultraviolet light-emitting diodes; wavelength 400 nm; wet-etched pattern sapphire substrate fabrication; Dry etching; Epitaxial growth; Gallium nitride; Light emitting diodes; Optical pumping; Optical sensors; Power generation; Stimulated emission; Substrates; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007. CLEO 2007. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-834-6

Type

conf

DOI

10.1109/CLEO.2007.4453549

Filename

4453549