• DocumentCode
    3022974
  • Title

    Multiple Wavelength Emission From Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD

  • Author

    Yu, Hongbo ; Jung, Taeil ; Lee, L.K. ; Ku, P.C.

  • Author_Institution
    Univ. of Michigan, Ann Arbor
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Multiple wavelength emission is experimentally observed from semipolar InGaN/GaN quantum wells selectively grown by MOCVD. Selective growth rates on different mask opening areas result in a multiple wavelength emission from the same wafer.
  • Keywords
    III-V semiconductors; MOCVD; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; InGaN-GaN; MOCVD; mask opening areas; multiple wavelength emission; selective growth rates; semipolar quantum wells; Epitaxial growth; Gallium nitride; Light emitting diodes; MOCVD; Monolithic integrated circuits; Quantum computing; Quantum well devices; Scanning electron microscopy; Silicon compounds; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453550
  • Filename
    4453550
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3022974