DocumentCode
3022993
Title
Carrier Concentration and Junction Temperature Dependencies of Illumination Efficiency of GaN Power Light-Emitting Diodes
Author
Liao, Michael P.
Author_Institution
DaYeh Univ., Changhua
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Pulsed drive currents have helped us separate the effects that junction temperature and carrier concentration have on current-induced efficiency degradation of GaN power LEDs. Carrier concentration and junction temperature dependencies of illumination efficiency are presented.
Keywords
III-V semiconductors; carrier density; gallium compounds; light emitting diodes; power semiconductor diodes; wide band gap semiconductors; GaN; LED; carrier concentration effects; current-induced efficiency degradation; illumination efficiency; junction temperature effects; power light-emitting diodes; pulse drive currents; Degradation; Gallium nitride; Light emitting diodes; Lighting; Optical pulses; Optical sensors; Power generation; Temperature dependence; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453551
Filename
4453551
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