Title :
Carrier Concentration and Junction Temperature Dependencies of Illumination Efficiency of GaN Power Light-Emitting Diodes
Author :
Liao, Michael P.
Author_Institution :
DaYeh Univ., Changhua
Abstract :
Pulsed drive currents have helped us separate the effects that junction temperature and carrier concentration have on current-induced efficiency degradation of GaN power LEDs. Carrier concentration and junction temperature dependencies of illumination efficiency are presented.
Keywords :
III-V semiconductors; carrier density; gallium compounds; light emitting diodes; power semiconductor diodes; wide band gap semiconductors; GaN; LED; carrier concentration effects; current-induced efficiency degradation; illumination efficiency; junction temperature effects; power light-emitting diodes; pulse drive currents; Degradation; Gallium nitride; Light emitting diodes; Lighting; Optical pulses; Optical sensors; Power generation; Temperature dependence; Temperature sensors; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453551
