• DocumentCode
    3023005
  • Title

    A study of catalyst-based ZnO nanowires growth by PECVD

  • Author

    Haniff, Muhammad Aniq Shazni Mohammad ; Wahid, Khairul Anuar Abd ; Lee, Woo Y. ; Lee, H.W. ; Embong, S.S. ; Azid, Ishak Hj Abd

  • Author_Institution
    MEMS & NEMS Cluster, MIMOS Berhad, Kuala Lumpur, Malaysia
  • fYear
    2012
  • fDate
    19-21 Sept. 2012
  • Firstpage
    18
  • Lastpage
    21
  • Abstract
    This paper analyzed the effects of the temperature and plasma on the nucleation and growth of the zinc oxide (ZnO) nanowires. Uniformly distributed ZnO nanowires were successfully synthesized through plasma-enhanced chemical vapor deposition (PECVD) on silicon (100) substrate under different thickness of gold (Au) as the catalyst material. Experimental results were characterized using field emission scanning electron microscopy (FESEM) showed that the optimum growths of ZnO nanowires were achieved at a higher temperature of 650°C for Au catalyst thickness between range of 2 to 5 nm. It is demonstrated as well that the introduction of plasma affects both the size of the Au nanoparticles formed during the nucleation process and subsequently the density of the ZnO nanowires synthesized during the growth process.
  • Keywords
    catalysts; field emission electron microscopy; gold; nanoparticles; nanowires; nucleation; plasma CVD; scanning electron microscopy; silicon; temperature; zinc compounds; FESEM; PECVD; ZnO; catalyst material; catalyst thickness; catalyst-based nanowires growth; field emission scanning electron microscopy; gold; nanoparticles; nucleation process; plasma-enhanced chemical vapor deposition; silicon substrate; temperature; zinc oxide nanowires; Gold; Nanoparticles; Nanowires; Plasma temperature; Substrates; Zinc oxide; PECVD; nanomaterials; zinc oxide nanowires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-2395-6
  • Electronic_ISBN
    978-1-4673-2394-9
  • Type

    conf

  • DOI
    10.1109/SMElec.2012.6417081
  • Filename
    6417081