Title :
Efficient point defect engineered si light-emitting diode at 1.218 μm
Author :
Bao, Jiming ; Tabbal, Malek ; Kim, Taegon ; Charnvanichborikarn, Supakit ; Williams, James S. ; Aziz, Michael J. ; Capasso, Federico
Author_Institution :
Harvard Univ. Cambridge, Cambridge
Abstract :
We have demonstrated a Si LED with an internal quantum efficiency ˜ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of- the art technology.
Keywords :
elemental semiconductors; light emitting diodes; point defects; silicon; LED; Si; internal quantum efficiency; light-emitting diode; point defect engineering; wavelength 1.218 micron; Electroluminescent devices; Light emitting diodes; Luminescence; Optical pulses; Particle beam optics; Physics; Radiative recombination; Space vector pulse width modulation; Stimulated emission; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453553
