Title :
Photoluminescence of porous silicon nanostructures with optimum current density of photo-electrochemical anodisation
Author :
Zubaidah, M.A. ; Asli, N.A. ; Rusop, M. ; Abdullah, Saad
Author_Institution :
Fac. of Appl. Sci., Univ. Teknol. MARA, Shah Alam, Malaysia
Abstract :
P-type silicon wafer (<;100>; orientation; boron doping; 0.75 ~ 10 Ωcm-1) was used to prepare samples of porous silicon nanostructures. All the samples have been prepared by using photo-electrochemical anodization. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) spectra were investigated. Sample B gives the maximum peak position of PL spectrum at ~675 nm.
Keywords :
anodisation; boron; current density; electrolytes; elemental semiconductors; etching; nanofabrication; nanoporous materials; organic compounds; photoelectrochemistry; photoluminescence; porous semiconductors; semiconductor doping; semiconductor technology; silicon; PL spectrum; Si:B; absolute ethanol; electrolyte volume ratio; fixed etching time; hydrofluoric acid; maximum peak position; optimum current density; p-type silicon wafer; photoelectrochemical anodisation; photoluminescence spectra; porous silicon nanostructures photoluminescence; time 30 min; wavelength 675 nm; Current density; Electroluminescence; Etching; Nanostructures; Photoluminescence; Raman scattering; Silicon; Photoluminescence; porous silicon nanostructures;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417099
