• DocumentCode
    3023645
  • Title

    A compact resistorless 1.5-V CMOS current reference with 16.5-ppm/°C temperature coefficient

  • Author

    Quemada, Carlos ; Cochran, Travis L. ; Ha, Dong Sam

  • Author_Institution
    Bradley Dept. of Electr. & Comput. Eng., Virginia Tech, Blacksburg, VA, USA
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    3146
  • Lastpage
    3149
  • Abstract
    In this paper a novel temperature compensated current reference with modified PMOS cascode architecture is presented. Using PMOS transistors and substituting the typical current source resistor with a diode connected NMOS transistor, better temperature compensation is achieved avoiding the use of large valued resistors. This architecture, designed in the IBM 0.18 μm CMOS 7RF SOI technology, achieves a 16.5 ppm/°C temperature coefficient over range of 20 °C to 130 °C together with reduced power consumption, 38.7 μW at 1.5 V, and silicon area, 130μm2.
  • Keywords
    CMOS integrated circuits; compensation; reference circuits; silicon-on-insulator; CMOS 7RF SOI technology; PMOS cascode architecture; PMOS transistor; compact resistorless CMOS current reference; diode connected NMOS transistor; power 38.7 muW; size 0.18 mum; temperature 20 C to 130 C; temperature coefficient; temperature compensation; voltage 1.5 V; CMOS integrated circuits; CMOS technology; MOSFETs; Resistors; Silicon; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6271989
  • Filename
    6271989