Formation of Copper oxide thin films from RF sputtered Cu thin film by ultra high pure boiled water

Author

Shanmugan, S. ; Mutharasu, D.

Author_Institution

Nano Optoelectron. Res. Lab., Univ. Sains Malaysia (USM), Minden, Malaysia

fYear

2012

fDate

19-21 Sept. 2012

Firstpage

132

Lastpage

136

Abstract

Copper oxide thin films were synthesized from rf sputtered Cu thin film using ultra high pure hot water. X ray diffraction studies confirmed the formation of mixed phases (Cubic Cu₂O and Monolithic CuO) after processing for 3 hrs duration. Transmittance studies also revealed the conversion of Cu into Copper oxide by showing high transmittance for processed film. The calculated band gap (2.6-2.69 eV) is higher than the bulk copper oxides (2.14 eV). PL spectra showed three dominant peaks at 390nm, 522nm and 680 nm related to nano structured Cu₂O. Raman spectra also confirmed the formation of nano crystals of Copper oxides.

Keywords

copper compounds; energy gap; semiconductor thin films; sputter deposition; Cu thin film; Cu₂O; CuO; PL spectra; RF sputtering; Raman spectra; X ray diffraction; band gap; copper oxide thin film; cubic Cu₂O; electron volt energy 2.14 eV; electron volt energy 2.6 eV to 2.69 eV; monolithic CuO; nanocrystal; nanostructured Cu₂O; ultrahigh pure boiled water; Copper; Optical films; Oxidation; Photonic band gap; Solids; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4673-2395-6

Electronic_ISBN

978-1-4673-2394-9

Type

conf

DOI

10.1109/SMElec.2012.6417108

Filename

6417108