• DocumentCode
    3023764
  • Title

    Observation of Long-Lived Screening in Low-Temperature-Grown GaAs Photoconductive Switches

  • Author

    Loata, G. ; Löffler, T. ; Thomson, M.D. ; Lisauskas, A. ; Roskos, H.G.

  • Author_Institution
    Johann Wolfgang Goethe-Univ., Frankfurt
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A subgroup of photoexcited carriers in biased few-mum-sized LT-GaAs switches is shown to recombine on a time scale of nanoseconds. This can induce field screening amounting to tens of percent of the applied field.
  • Keywords
    III-V semiconductors; gallium arsenide; optoelectronic devices; photoconducting materials; photoconducting switches; photoconductive switches; photoexcited carriers; Charge carrier processes; Charge carriers; Electron traps; Gallium arsenide; Laser beams; Laser excitation; Optical switches; Photoconducting materials; Photoconductivity; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453583
  • Filename
    4453583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3023764