DocumentCode :
3023987
Title :
ITO Thin Films by RF Sputtering for Ethanol Sensing
Author :
Chandra, Sudhir ; Pandya, H.J. ; Vyas, A.L.
Author_Institution :
Centre for Appl. Res. in Electron., Indian Inst. of Technol. Delhi, New Delhi, India
fYear :
2010
fDate :
18-25 July 2010
Firstpage :
130
Lastpage :
134
Abstract :
The sensor for detection of ethanol vapours using RF sputter deposited ITO thin film on glass and Si substrates is reported. The principle of operation is the change of resistance of ITO film on exposure to ethanol vapours. The films were annealed at 450°C for 1h in air. The films were extensively characterized for their structural properties using XRD, SEM and TEM measurements. The sensing area was kept to be 3mm × 3mm and two aluminium pads of 7mm × 4mm size were formed using lift-off technique for electrical contacts. The stability of the sensing films with aging and temperature variations was also investigated. It is shown that sputtering parameters such as RF power strongly affect the sensitivity of detection.
Keywords :
X-ray diffraction; ageing; annealing; electrical contacts; gas sensors; indium compounds; scanning electron microscopy; sputter deposition; thin film sensors; thin films; transmission electron microscopy; ITO; ITO thin film deposition; RF sputtering; SEM measurement; Si; TEM measurement; XRD measurement; aging; aluminium pad; annealing; electrical contact; ethanol sensing; ethanol vapour detection; glass; indium tin oxide; sensing film stability; silicon substrate; structural properties; temperature 450 degC; time 1 h; Annealing; Ethanol; Films; Indium tin oxide; Radio frequency; Resistance; Temperature sensors; Indium Tin Oxide; RF sputtering; ethanol sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensor Device Technologies and Applications (SENSORDEVICES), 2010 First International Conference on
Conference_Location :
Venice
Print_ISBN :
978-1-4244-7474-5
Type :
conf
DOI :
10.1109/SENSORDEVICES.2010.31
Filename :
5632123
Link To Document :
بازگشت