Title :
High-power high-speed Ga0.51In0.49P/Inx Ga1-xAs doped-channel FET´s
Author :
Lin, Yo-Sheng ; Lu, Shey-Shi
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The first Ga0.51In0.49P/InxGa1-xAs (0⩽x⩽0.22) doped-channel FETs (DCFETs) grown by GSMBE exhibiting excellent dc and microwave characteristics were successfully fabricated. A high gm of 306 mS/mm, a high ft of 21.7 GHz and a high fmax of 53.4 GHz were achieved at 300 K for a Ga0.51In0.49P/In0.2Ga0.8As DCFET with a 1 μm-long gate. This device also showed a very high maximum current density (630 mA/mm) and a very high drain-source operating voltage (13 V). Moreover, wide and flat characteristics of g m, ft, and fmax versus drain current (or gate voltage) were attained for all DCFETs. Power performance of Ga 0.51In0.49P/In0.2Ga0.8As DCFETs, Al0.3Ga0.7As/In0.2Ga0.8 As DCFETs and HEMTs were calculated. It is found that Ga0.51 In0.49P/In0.2Ga0.8As DCFETs provides the largest power among the three devices. These results demonstrate that high transconductance, high linearity, high speed and high output-power can be achieved by using InxGa1-xAs and Ga0.51In0.49P as the channel and insulator materials, respectively
Keywords :
III-V semiconductors; S-parameters; characteristics measurement; chemical beam epitaxial growth; current density; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor growth; 1 mum; 13 V; 21.7 GHz; 300 K; 306 mS/mm; 53.4 GHz; Al0.3Ga0.7As-In0.2Ga0.8 As; DC characteristics; GSMBE; Ga0.51In0.49P-In0.2Ga0.8 As; Ga0.51In0.49P/InxGa1-x As doped-channel FET; HEMT; I-V characteristics; S-parameters; cutoff frequency; drain-source operating voltage; high linearity; high output-power; high-power high-speed performance; maximum current density; maximum frequency of oscillation; microwave characteristics; power performance; transconductance; wide flat characteristics; FETs; Gallium arsenide; HEMTs; Insulation; Intrusion detection; Photonic band gap; Schottky barriers; Temperature; Voltage; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600177
