• DocumentCode
    3024101
  • Title

    Controlled growth of ZnO nanostructures prepared by catalytic-immersion method

  • Author

    Azlinda, A. ; Khusaimi, Z. ; Rusop, M.

  • Author_Institution
    NANO-SciTech Centre (NST), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
  • fYear
    2012
  • fDate
    19-21 Sept. 2012
  • Firstpage
    214
  • Lastpage
    218
  • Abstract
    This paper presents an efficient method to prepare ZnO nanostructure via immersion of Si substrate with catalyst assistance (gold) (Au/Si) in the mixture of zinc nitrate hexahydrate (Zn(NO3)2.6H2O) and urea (CH4N2O). The effect of precursor concentration ranging from 0.01 to 0.6 (molar ratio 1:1) was evaluated in this study. Solution-immersion method was adopted with the intention to develop a large area deposition at low-temperature. As concentration increase, the morphologies changed from rod (diameter ~208 nm and length ~ 920) to accumulated nano-sheets that consist of many pores. The structural, morphology and photoluminescence effect of changing the precursor concentration on the synthesization of ZnO films were investigated by X-ray diffractometer (XRD), field emission scanning electron microscope (FESEM) and room temperature photoluminescence (PL) measurement, respectively. A unique development of size and growth orientation is seemingly affected by the change of the precursor concentration.
  • Keywords
    catalysts; gold; nanotechnology; silicon; zinc compounds; Au; CH4N2O; FESEM; Si; Si substrate; X-ray diffractometer; XRD; Zn(NO3)2H2O; ZnO; ZnO films; ZnO nanostructures; catalyst; catalytic-immersion method; field emission scanning electron microscope; gold; nanosheets; room temperature photoluminescence; solution-immersion method; zinc nitrate hexahydrate; Gold; Nanostructures; Photoluminescence; Silicon; Substrates; Zinc oxide; Immersion; catalyst; photoluminescence; precursor concentration; urea; zinc nitrate hexahydrate;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-2395-6
  • Electronic_ISBN
    978-1-4673-2394-9
  • Type

    conf

  • DOI
    10.1109/SMElec.2012.6417126
  • Filename
    6417126