• DocumentCode
    3024236
  • Title

    Ultrasensitive Poly-Si nanogap based on capacitive sensor for electrochemical detection

  • Author

    Taib, N. ; Hashim, U. ; Dhahi, T.S. ; Sudin, A. ; Salleh, N.H.M. ; Seng Teik Ten

  • Author_Institution
    Inst. of Nanoelectronic Eng. (INEE), Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia
  • fYear
    2012
  • fDate
    19-21 Sept. 2012
  • Firstpage
    238
  • Lastpage
    241
  • Abstract
    Nanogap has become a new emerging subject to researcher around the globe for its complementary study with biomolecule and ionic level detection. Higher sensitivity and selectivity in sensing device attained by nanogap has resolved many limitations faced by previous bulk device. For this project, we present a novelty device provide ultrasensitive label-free detection using real time measurement. The fabrication of device involves only conventional lithographic process and simple dry oxidation process. By using 42 nm nanogap devices, the sensitivity of nanogap were tested by dropping 10μL of different level pH and NaCl concentrations onto the target. Experiments were performed by sweeping frequencies from 1 Hz to 1 MHz at room temperature with 30 mV input signal(0 V, DC, Offset). The effects of excitation frequency on capacitance sampling were analyzed.
  • Keywords
    capacitance; capacitive sensors; electrochemical sensors; nanofabrication; nanolithography; nanosensors; oxidation; pH; Si; biomolecule level detection; bulk device; capacitance sampling; capacitive sensor-based ultrasensitive polySi nanogap; device fabrication; electrochemical detection; excitation frequency; frequency 1 Hz to 1 MHz; ionic level detection; lithographic process; nanogap testing; pH level; real time measurement; sensing device; simple dry oxidation process; size 42 nm; sweeping frequencies; temperature 293 K to 298 K; ultrasensitive label-free detection; voltage 30 mV; Capacitance; Capacitance measurement; Dielectrics; Electrodes; Nanoscale devices; Sensitivity; Substrates; Nanogap; ionic capacitance; lithography; thermal oxidation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-2395-6
  • Electronic_ISBN
    978-1-4673-2394-9
  • Type

    conf

  • DOI
    10.1109/SMElec.2012.6417131
  • Filename
    6417131