DocumentCode :
3024236
Title :
Ultrasensitive Poly-Si nanogap based on capacitive sensor for electrochemical detection
Author :
Taib, N. ; Hashim, U. ; Dhahi, T.S. ; Sudin, A. ; Salleh, N.H.M. ; Seng Teik Ten
Author_Institution :
Inst. of Nanoelectronic Eng. (INEE), Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia
fYear :
2012
fDate :
19-21 Sept. 2012
Firstpage :
238
Lastpage :
241
Abstract :
Nanogap has become a new emerging subject to researcher around the globe for its complementary study with biomolecule and ionic level detection. Higher sensitivity and selectivity in sensing device attained by nanogap has resolved many limitations faced by previous bulk device. For this project, we present a novelty device provide ultrasensitive label-free detection using real time measurement. The fabrication of device involves only conventional lithographic process and simple dry oxidation process. By using 42 nm nanogap devices, the sensitivity of nanogap were tested by dropping 10μL of different level pH and NaCl concentrations onto the target. Experiments were performed by sweeping frequencies from 1 Hz to 1 MHz at room temperature with 30 mV input signal(0 V, DC, Offset). The effects of excitation frequency on capacitance sampling were analyzed.
Keywords :
capacitance; capacitive sensors; electrochemical sensors; nanofabrication; nanolithography; nanosensors; oxidation; pH; Si; biomolecule level detection; bulk device; capacitance sampling; capacitive sensor-based ultrasensitive polySi nanogap; device fabrication; electrochemical detection; excitation frequency; frequency 1 Hz to 1 MHz; ionic level detection; lithographic process; nanogap testing; pH level; real time measurement; sensing device; simple dry oxidation process; size 42 nm; sweeping frequencies; temperature 293 K to 298 K; ultrasensitive label-free detection; voltage 30 mV; Capacitance; Capacitance measurement; Dielectrics; Electrodes; Nanoscale devices; Sensitivity; Substrates; Nanogap; ionic capacitance; lithography; thermal oxidation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
Type :
conf
DOI :
10.1109/SMElec.2012.6417131
Filename :
6417131
Link To Document :
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